首页> 外国专利> METHOD FOR DEPOSITING AN ATOMIC LAYER FOR IMPROVEMENT OF THIN FILM CHARACTERISTICS CAPABLE OF REPEATING REINFORCEMENT DEPOSITION CYCLE SEVERAL TIMES WHERE LOW TEMPERATURE STEP AND HIGH TEMPERATURE STEP MAKE ONE REINFORCEMENT DEPOSITION CYCLE

METHOD FOR DEPOSITING AN ATOMIC LAYER FOR IMPROVEMENT OF THIN FILM CHARACTERISTICS CAPABLE OF REPEATING REINFORCEMENT DEPOSITION CYCLE SEVERAL TIMES WHERE LOW TEMPERATURE STEP AND HIGH TEMPERATURE STEP MAKE ONE REINFORCEMENT DEPOSITION CYCLE

机译：沉积原子层以改善薄膜特性的方法，所述薄膜特性可在低温步骤和高温步骤多次重复一次一次强化沉积循环的情况下重复强化沉积循环

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摘要

PURPOSE: A method for depositing an atomic layer for improvement of thin film characteristics is provided to implement a thin film having excellent density and corrosion resistance by performing a low temperature process and a high temperature process by arranging a low temperature area and a high temperature area.;CONSTITUTION: Precursor gas and reaction gas are supplied to a substrate and a thin film is deposited at a first temperature. The thin film is deposited at a second temperature higher than the first temperature by supplying the precursor gas and the reaction gas to the substrate where the thin film of 1 cycle is deposited. The low temperature step and the high temperature step make one reinforcement deposition cycle step, and the reinforcement deposition cycle step is performed repetitively several times. The first temperature is the process temperature to deposit the atomic layer, and the second temperature is higher than the first temperature.;COPYRIGHT KIPO 2013;[Reference numerals] (AA) High-temperature region; (BB) Low-temperature region

机译：目的：提供一种用于沉积原子层以改善薄膜特性的方法，该方法通过布置低温区域和高温区域来执行低温工艺和高温工艺，从而实现具有优异的密度和耐腐蚀性的薄膜组成：将前体气体和反应气体提供给基板，并在第一温度下沉积薄膜。通过将前体气体和反应气体供给到沉积有1个周期的薄膜的基板，从而在高于第一温度的第二温度下沉积薄膜。低温步骤和高温步骤构成一个增强沉积循环步骤，并且增强沉积循环步骤重复执行几次。第一温度是沉积原子层的工艺温度，第二温度高于第一温度。COPYRIGHTKIPO 2013; [参考数字]（AA）高温区域; （BB）低温区

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公开/公告号KR20130067123A

专利类型
公开/公告日2013-06-21

原文格式PDF
申请/专利权人 K.C.TECH CO. LTD.;
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申请/专利号KR20110133985
发明设计人 SEOK JANG HYEON;
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申请日2011-12-13
分类号C23C16/448;C23C16/46;H01L21/205;
国家 KR
入库时间 2022-08-21 16:26:54

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