首页> 外国专利> DEPOSITING DEVICE USING A HIGH DENSITY PLASMA AND A METHOD THEREOF, CAPABLE OF CHANGING A TRANSPORTING ROUTE OF THE HIGH DENSITY PLASMA WITH A MAGNETIC FIELD CONTROL TECHNOLOGY

DEPOSITING DEVICE USING A HIGH DENSITY PLASMA AND A METHOD THEREOF, CAPABLE OF CHANGING A TRANSPORTING ROUTE OF THE HIGH DENSITY PLASMA WITH A MAGNETIC FIELD CONTROL TECHNOLOGY

机译:使用高密度等离子体的沉积装置及其方法,能够通过磁场控制技术改变高密度等离子体的传输路径

摘要

PURPOSE: A depositing device using high density plasma and a method thereof are provided to expect an effect improving deposition performance, to deposit a substrate at a high speed, and to clean the substrate.;CONSTITUTION: A depositing device using a high density plasma comprises; a chamber(10) with an outlet; a plasma generating unit(20) emitting the high density plasma to an internal space of the chamber; a magnetic field generating unit(50) forming a magnetic field for guiding the high density plasma; a target(30) activated by the high density plasma; and a substrate(40) deposited by the activation of a target.;COPYRIGHT KIPO 2013;[Reference numerals] (1,2,3) Plasma induction magnetic field coil; (20) High density plasma source; (AA) Deposition substrate power supply; (BB) Deposition substrate; (CC) Sputtering target power supply
机译:目的:提供一种使用高密度等离子体的沉积装置及其方法,以期获得改善沉积性能,高速沉积基板并清洁基板的效果。 ;具有出口的腔室(10);等离子体产生单元(20),将高密度等离子体发射到腔室的内部空间。磁场产生单元(50)形成用于引导高密度等离子体的磁场;由高密度等离子体激活的靶(30); COPYRIGHT KIPO 2013; [1,2,3]等离子感应磁场线圈;以及通过激活靶而沉积的基板(40)。 (20)高密度等离子体源; (AA)沉积基板电源; (BB)沉积基板; (CC)溅射目标电源

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