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NITRIDE SEMICONDUCTOR DEVICE HAVING A NORMALLY-OFF GaN HEMT AND A DIODE, A MANUFACTURING METHOD THEREOF AND A NITRIDE SEMICONDUCTOR POWER DEVICE
NITRIDE SEMICONDUCTOR DEVICE HAVING A NORMALLY-OFF GaN HEMT AND A DIODE, A MANUFACTURING METHOD THEREOF AND A NITRIDE SEMICONDUCTOR POWER DEVICE
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机译：具有常断型GaN HEMT和二极管的氮化物半导体器件，其制造方法以及氮化物半导体功率器件
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摘要
PURPOSE: A nitride semiconductor device, a manufacturing method thereof and a nitride semiconductor power device are provided to implement a high electrical characteristic by increasing the gate-source voltage of a normally-on GaN HEMT without using an additional external circuit.;CONSTITUTION: A nitride semiconductor layer(30) is formed on a substrate(10). The nitride semiconductor layer has a two dimensional electron gas channel(35). A D mode FET(100) includes a gate electrode(70) schottky-contacted on the nitride semiconductor layer. A schottky diode(200) includes an anode electrode(80) schottky-contacted on the nitride semiconductor layer. The anode electrode is connected to the gate electrode of the D mode FET.;COPYRIGHT KIPO 2013
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