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FABRICATING METHOD OF SILICON CARBIDE POWDER CAPABLE OF ENSURING SILICON CARBIDE POWER WITH PARTICLE SIZES OF 10 UM OR MORE BY MIXING AND REACTING SILICON CARBIDE SOURCE WITH SILICON SOURCE, SOLID CARBON SOURCE, OR AN ORGANIC COMPOUND CONTAINING CARBON SOURCE
FABRICATING METHOD OF SILICON CARBIDE POWDER CAPABLE OF ENSURING SILICON CARBIDE POWER WITH PARTICLE SIZES OF 10 UM OR MORE BY MIXING AND REACTING SILICON CARBIDE SOURCE WITH SILICON SOURCE, SOLID CARBON SOURCE, OR AN ORGANIC COMPOUND CONTAINING CARBON SOURCE
PURPOSE: A fabricating method of silicon carbide powder is provided to synthesize silicon carbide powder with desired particle sizes, specifically 10 um or more, and high purity at low temperatures.;CONSTITUTION: A fabricating method of silicon carbide powder includes a process for mixing silicon carbide source with silicon containing silicon source, solid carbon source, or organic compound containing carbon source to form a mixture(ST10); and a process for reacting the mixture(ST20). The average particle size of the silicon carbide source is 1-10 um. The silicon carbide source has -type crystallinity. The silicon source is selected from a group including silica sol, silicon dioxide, fine silica, and quartz powder. The solid carbon source is selected form a group including carbon black, carbon nanotubes, and fullerene. The organic carbon compound is selected from a group including a phenol resin, a fran resin, a xylene resin, polyimide, polyacrylonitrile, polyvinyl alcohol, cellulose, pitch, tar, and sugars.;COPYRIGHT KIPO 2013;[Reference numerals] (ST10) Mixture forming step; (ST20) Mixture reacting step
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