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Method for manufacturing GaN LED array device for optogenetics and GaN LED array device for optogenetics

机译:用于光遗传学的GaN LED阵列器件的制造方法和用于光遗传学的GaN LED阵列器件

摘要

PURPOSE: A manufacturing method for a GaN(gallium nitride) LED array device for an optogenetics and the GaN LED array device manufactured thereby are provided to easily clarify a nerve circuit by allowing on-off stimulation of a nerve cell through an LED array which independently becomes on/off. CONSTITUTION: A bonding layer(501) is coated on a plastic substrate(500). A first passivation layer(310) is laminated on the bonding layer. A second passivation layer(320) is laminated on the first passivation layer. A third passivation layer(330) is laminated on the second passivation layer. A first contact line(502) is connected to a contact metal on an n-GaN layer. A second metal line(503) is connected to a contact metal on a p-GaN layer.
机译:目的:提供用于光遗传学的GaN(氮化镓)LED阵列器件的制造方法和由此制造的GaN LED阵列器件,以通过允许通过独立地通过LED阵列对神经细胞的开-关刺激来容易地使神经回路清晰化。开启/关闭。组成:粘结层(501)被涂在塑料基板(500)上。第一钝化层(310)被层压在结合层上。在第一钝化层上层压第二钝化层(320)。在第二钝化层上层压第三钝化层(330)。第一接触线(502)连接到n-GaN层上的接触金属。第二金属线(503)连接到p-GaN层上的接触金属。

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