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PATTERN FORMATION METHOD OF A SEMICONDUCTOR DEVICE WHICH IMPORVES CRITICAL DIMENSION UNIFORMITY OF A PATTERN
PATTERN FORMATION METHOD OF A SEMICONDUCTOR DEVICE WHICH IMPORVES CRITICAL DIMENSION UNIFORMITY OF A PATTERN
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机译：改善图案临界尺寸均匀性的半导体装置的图案形成方法
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PURPOSE: A pattern forming method of a semiconductor device is provided to prevent an SOC film to be lifted in the strip process of an amorphous carbon layer before etching an etched layer by eliminating the SOC film remaining in a peripheral circuit region.;CONSTITUTION: An etched layer(200), a first hard mask(205) and a second hard mask(210) are formed on the upper side of a semiconductor substrate which includes a cell region and a peripheral circuit region. A second hard mask pattern(210a) of a line-shape is formed by patterning the second hard mask of the cell region. A third hard mask pattern(215a) of the line-shape which is crossed with the second hard mask pattern is formed on the upper side of the first hard mask. The first hard mask is partly etching using the second hard mask pattern and the third hard mask pattern as an etching mask. A first hard mask pattern is formed by etching the first hard mask which is partly etched.;COPYRIGHT KIPO 2013
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