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THIN FILM TRANSISTOR SUBSTRATE CAPABLE OF REDUCING PROCESSING COSTS AND TIME BY REDUCING THE FREQUENCY OF MASK PROCESSES BY AT LEAST TWO TIMES AND A MANUFACTURING METHOD THEREOF
THIN FILM TRANSISTOR SUBSTRATE CAPABLE OF REDUCING PROCESSING COSTS AND TIME BY REDUCING THE FREQUENCY OF MASK PROCESSES BY AT LEAST TWO TIMES AND A MANUFACTURING METHOD THEREOF
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机译：通过减少至少两次屏蔽过程的频率，能够减少处理成本和时间的薄膜晶体管基板，及其制造方法
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摘要
PURPOSE: A thin film transistor substrate and a manufacturing method thereof are provided to form source/drain electrodes and a semiconductor pattern during the same mask process and form a third protective film and a common electrode on the same mask, thereby reducing the frequency of mask processes by at least two times.;CONSTITUTION: First to third protective films(132,134,136) cover a thin film transistor. The first to third protective films include pixel contact holes(120). A pixel electrode(122) is formed on the third protective film. The pixel electrode is connected to a drain electrode(110). A common electrode(124) forms a fringe field with the pixel electrode. A space(W) is formed between the common electrode and the pixel electrode by an undercut structure.;COPYRIGHT KIPO 2013
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