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VARIABLE-RESISTANCE TYPE NON-VOLATILE STORAGE DEVICE AND METHOD FOR DRIVING VARIABLE-RESISTANCE TYPE NON-VOLATILE STORAGE DEVICE
VARIABLE-RESISTANCE TYPE NON-VOLATILE STORAGE DEVICE AND METHOD FOR DRIVING VARIABLE-RESISTANCE TYPE NON-VOLATILE STORAGE DEVICE
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机译：可变电阻型非易失性存储设备和驱动可变电阻型非易失性存储设备的方法
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摘要
In order to realise stable operation by limiting abnormal current, a variable-resistance type non-volatile storage device (200) is provided with: a variable resistance element; a memory cell array (202) comprising a plurality of memory cells formed of current control elements which are connected in series to the variable resistance element and have current flowing therethrough, which is deemed to be a conduction state, when an applied voltage exceeds a predetermined threshold voltage, the plurality of memory cells being disposed at solid crossing points of a plurality of word lines and bit lines; and a detection circuit for detecting defective memory cells in a second low-resistance state in which the resistance value is lower than in a first low-resistance state. The bit lines and word lines that are connected to a defective memory cell detected by the detection circuit are together fixed in an inactive state.
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