Double deposition of a stress-inducing layer in an interlayer dielectric with intermediate stress relaxation in a semiconductor device

• 1. 包含偶联的电介质层和金属层的半导体器件、其制造方法和用于偶联半导体器件中的电介质层和金属层的材料 [P] . 中国专利： CN101287777B . 2011.12.21
• 2. 包含偶联的电介质层和金属层的半导体器件、其制造方法和用于偶联半导体器件中的电介质层和金属层的材料 [P] . 中国专利： CN101287777A . 2008-10-15
• 3. DOUBLE DEPOSITION OF A STRESS-INDUCING LAYER IN AN INTERLAYER DIELECTRIC WITH INTERMEDIATE STRESS RELAXATION IN A SEMICONDUCTOR DEVICE [P] . 美国专利： US2009243049A1 . 2009-10-01

  机译： 半导体器件中层介质中应力松弛的层间介质中应力诱导层的双沉积

• 4. Double layer deposition of a bracing induzier ends in a between the layer dielectric with intermediate bracing relaxation in the case of a semiconductor device [P] . 德国专利： DE102008016438A1 . 2009-10-08

  机译： 在半导体器件的情况下，支撑工业的双层沉积终止于层间电介质之间的α，中间支撑松弛。

• 5. Interlayer dielectric material in a semiconductor device comprising stressed layers with an intermediate buffer material [P] . 美国专利： US8546274B2 . 2013-10-01

  机译： 半导体器件中的层间介电材料，其包括带有中间缓冲材料的应力层

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• 2. Impact of organic interlayer anions on the CO2 adsorption performance of Mg-Al layered double hydroxides derived mixed oxides [J] . Qingqing Qin, Junya Wang, Tuantuan Zhou, 能源化学：英文版 . 2017,第003期
• 3. Effect of interlayer anions on chromium removal using Mg-Al layered double hydroxides:Kinetic, equilibrium and thermodynamic studies [J] . Mohamed Khitous, Zineb Salem, Djamila Halliche 中国化学工程学报（英文版） . 2016,第004期
• 4. Magnetic Properties of Ferromagnetic Double Layers with Ferrimagnetic Interlayer Coupling at Zero Temperature [J] . JIANG Wei, ZHU Cheng-Bo, WANG Wei, 理论物理通讯（英文版） . 2009,第002期
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• 6. Review of methods for the mitigation of plasma‐induced damage to low‐dielectric‐constant interlayer dielectrics used for semiconductor logic device interconnects [J] . Miyajima Hideshi, Ishikawa Kenji, Sekine Makoto, Plasma processes and polymers . 2019,第9期
• 7. Control of Ga-oxide interlayer growth and Ga diffusion in SiO_2/GaN stacks for high-quality GaN-based metal-oxide-semiconductor devices with improved gate dielectric reliability [J] . Yamada Takahiro, Watanabe Kenta, Nozaki Mikito, Applied physics express . 2018,第1期
• 8. Multi-functional optically sensitive metal-insulator-semiconductor devices based on Pt nanoparticles fabricated in-situ with a dielectric stack using atomic layer deposition [C] . R. Padmanabhan, V. Mikhelashvili, B. Meyler, IEEE International Conference on Nanotechnology . 2015
• 9. High-K dielectric depositions (aluminum oxide) using ozone-based ALD (atomic layer deposition) for graphene-based devices . [D] . Lee, Bongki. 2010
• 10. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors [O] . Huan-Yu Shih, Fu-Chuan Chu, Atanu Das, 2016
• 11. Interlayer dielectric function of a type-II van der Waals semiconductor: The HfS2/PtS2 heterobilayer [O] . Stefana Anais Colibaba, Sabine Körbel, Carlo Motta, 2019

• 1. Interlayer exchange coupling in (Ga,Mn) As ferromagnetic semiconductor multilayer systems [J] . Sanghoon Lee ,Sunjae Chung ,Hakjoon Lee . 半导体学报：英文版 . 2019,第8期
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• 3. 同步碎石应力吸收层在层间处治中的应用研究 [A] . 王俭 . 2015