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Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails
Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails
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机译:在具有受控界面特性和扩散尾部的IV组衬底上制造半导体器件的方法
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摘要
A multi junction solar cell having epitaxially-deposited III/V compounds on vicinal group IV substrates and method for making same. The solar cell includes an AlAs nucleating layer on a Ge substrate. The group IV substrate contains a p-n junction whose change of characteristics during epitaxial growth of As-containing layers is minimized by the AlAs nucleating layer. The AlAs nucleating layer provides improved morphology of the solar cell and a means to control the position of a p-n junction near the surface of the group IV substrate through diffusion of As and/or P and near the bottom of the III/V structure through minimized diffusion of the group IV element.
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