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Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails

机译:在具有受控界面特性和扩散尾部的IV组衬底上制造半导体器件的方法

摘要

A multi junction solar cell having epitaxially-deposited III/V compounds on vicinal group IV substrates and method for making same. The solar cell includes an AlAs nucleating layer on a Ge substrate. The group IV substrate contains a p-n junction whose change of characteristics during epitaxial growth of As-containing layers is minimized by the AlAs nucleating layer. The AlAs nucleating layer provides improved morphology of the solar cell and a means to control the position of a p-n junction near the surface of the group IV substrate through diffusion of As and/or P and near the bottom of the III/V structure through minimized diffusion of the group IV element.
机译:在邻近的第IV族衬底上具有外延沉积的III / V族化合物的多结太阳能电池及其制造方法。太阳能电池在Ge衬底上包括AlAs成核层。 IV族衬底包含p-n结,其通过AlAs成核层使含As层的外延生长期间的特性变化最小化。 AlAs成核层改善了太阳能电池的形貌,并提供了一种方法,该方法可通过As和/或P的扩散来控制IV组衬底表面附近的pn结的位置,并通过最小化来控制III / V结构底部附近的pn结的位置。 IV族元素的扩散。

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