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Photolithography method including technique of determining distribution of energy of exposure light passing through slit of exposure apparatus

机译:包括确定通过曝光设备的狭缝的曝光光的能量分布的技术的光刻方法

摘要

The energy distribution of exposure light directed passing through the slit of an exposure apparatus is determined. A photoresist layer on a substrate is exposed over a plurality of shots while changing the intensity of the exposure light for each shot. Then the photoresist layer is developed to form a sample photoresist layer. An image of the developed sample photoresist layer is analyzed for color intensity. Values of the color intensity across a selected one of the shots are correlated with values of the intensity of the exposure light to produce an energy distribution of the exposure light along the length of the slit. The energy distribution is used to change the slit so that a more desirable energy distribution may be realized when the slit is used in a process of manufacturing a semiconductor device.
机译:确定被引导通过曝光设备的狭缝的曝光光的能量分布。基板上的光致抗蚀剂层经过多次曝光而曝光,同时改变每次曝光的曝光光强度。然后将光致抗蚀剂层显影以形成样品光致抗蚀剂层。分析显影的样品光致抗蚀剂层的图像的颜色强度。使选定的一个镜头中的颜色强度的值与曝光光的强度值相关,以产生沿着狭缝的长度的曝光光的能量分布。能量分布用于改变狭缝,从而当在半导体器件的制造过程中使用狭缝时,可以实现更期望的能量分布。

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