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Silicon carbide matrix composite material, process for producing the same and process for producing part of silicon carbide matrix composite material

机译:碳化硅基复合材料,其制造方法和部分碳化硅基复合材料的生产方法

摘要

Silicon carbide matrix composite material (1) comprises silicon carbide matrix (2) as a host The silicon carbide matrix (2) comprises first silicon carbide phase (3) of 0.1 to 10 μm average crystal grain diameter and second silicon carbide phase (4) of 0.01 to 2 μm average crystal grain diameter. In interstices of silicon carbide crystal grains constituting the silicon carbide matrix (2), liberated silicon phase (5) amounting to, for example, 5 to 50 mass % based on the composite material (1) is present continuously in network form. This fine structure enables realizing high strength and high toughness of the silicon carbide composite material (1).
机译:碳化硅基质复合材料( 1 )以碳化硅基质( 2 )为主体碳化硅基质( 2 )包括第一碳化硅平均晶粒直径为0.1至10μm的第二相( 3 )和平均晶粒直径为0.01至2μm的第二碳化硅相( 4 )。在构成碳化硅基体( 2 )的碳化硅晶粒的间隙中,游离硅相( 5 )相对于例如碳化硅为5〜50质量%。复合材料( 1 )以网络形式连续存在。这种精细的结构能够实现碳化硅复合材料( 1 )的高强度和高韧性。

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