首页> 外国专利> CHEMICAL VAPOR DEPOSITION APPARATUS FOR SYNTHESIZING DIAMOND FILM AND METHOD FOR SYNTHESIZING DIAMOND FILM USING THE SAME

CHEMICAL VAPOR DEPOSITION APPARATUS FOR SYNTHESIZING DIAMOND FILM AND METHOD FOR SYNTHESIZING DIAMOND FILM USING THE SAME

机译:用于合成金刚石膜的化学气相沉积设备和使用该方法合成金刚石膜的方法

摘要

The present disclosure relates to a chemical vapor deposition apparatus for synthesizing a diamond film and a method for synthesizing a diamond film using the same, which maintains the substrate temperature at an optimum level by suppressing the rise of a substrate temperature, and, thus, improves the degree of activation of a diamond synthesizing gas to increase a diamond growth rate when synthesizing a diamond film. The chemical vapor deposition apparatus for synthesizing a diamond film according to the present disclosure includes a chamber in which a chemical vapor deposition process is performed, a substrate provided in the chamber and giving a place where diamond is grown, and a heat-shielding structure spaced above from the substrate, wherein the heat-shielding structure includes an opening through which a precursor gas is transferable.
机译:本发明涉及一种用于合成金刚石膜的化学气相沉积设备和一种使用该化学气相沉积设备的金刚石膜的合成方法,其通过抑制衬底温度的升高将衬底温度保持在最佳水平,从而改善了温度。合成金刚石膜时金刚石合成气的活化程度以提高金刚石生长速率。根据本公开的用于合成金刚石膜的化学气相沉积设备包括在其中执行化学气相沉积过程的腔室,设置在该腔室中并提供生长金刚石的位置的基板以及间隔开的隔热结构。所述隔热结构包括从所述基板的上方延伸的开口,其中,前体气体可通过所述开口进行传输。

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