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Chemical machine grinding device, chemical machine grinding manner and control supervisor
Chemical machine grinding device, chemical machine grinding manner and control supervisor
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机译：化工机械研磨装置，化工机械研磨方式及控制主管
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摘要
Scratches and dishing are prevented from being generated when copper, which is deposited ON an interlayer insulating film formed of an organic low-k film and is polished during a damascene process. In the CMP apparatus and while a rotating center axis of a rotating head, which has a polishing propellent-actuated device attached thereon, and a rotating center axis of a rotating table, which has a semiconductor wafer disposed face-up thereon, are aligned ON the same vertical line, and the rotating head and the rotating table are spin-rotating in the same direction and the rotating head is lowered and the polishing propellent-actuated device touches the semiconductor wafer ON the rotating table. Accordingly the polishing propellent-actuated device is prevented from scrubbing in a direction opposite to the rotating direction of the semiconductor wafer in the entire surface of the semiconductor wafer.
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