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Nitride based transistors with fabrication methods and regrowth ohmic contact region of the nitride based transistors having regrown ohmic contact regions
Nitride based transistors with fabrication methods and regrowth ohmic contact region of the nitride based transistors having regrown ohmic contact regions
By forming the channel layer of a nitride based on the substrate, forming a barrier layer on the channel layer of nitride-based transistors fabrication, the barrier layer to expose the contact region of the channel layer of nitride based By forming the contact recesses, for example, be used for low temperature deposition process, forming a contact layer on the contact region on the exposed channel layer of nitride based, forming an ohmic contact on the contact layer, and and includes the, forming a gate contact disposed on the barrier layer adjacent the ohmic contact. In addition, manufacturing method of the HEMT and (HEMT) is provided a high electron mobility transistor. A channel layer of nitride-based substrate, a barrier layer on the channel layer of the nitride-based, it extends into the channel layer, a contact recess in the barrier layer, HEMT is channel nitride based in the contact recess I and includes a contact region of the n-type semiconductor material of the nitride-based layer on the ohmic contact in the contact region of the nitride-based, and a gate contact disposed on the barrier layer adjacent to the ohmic contact. A channel layer of nitride-based contact region and an n-type semiconductor material of the nitride-based, includes a surface area enlargement structure.
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