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The formation mannered null semiconductor equipment of the device which is installed the passivity membrane and that passivity membrane
The formation mannered null semiconductor equipment of the device which is installed the passivity membrane and that passivity membrane
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机译：安装有钝化膜和该钝化膜的器件的形成方式为空的半导体设备
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摘要
A method of forming a multiple layer passivation film on a semiconductor device surface comprises placing a semiconductor device in a chemical vapor deposition reactor, introducing a nitrogen source into the reactor, introducing a carbon source into the reactor, depositing a layer of carbon nitrogen on the semiconductor device surface, introducing a silicon source into the reactor after the carbon source, and depositing a layer of silicon carbon nitrogen on the carbon nitrogen layer. A semiconductor device incorporating the multiple layer passivation film is also described.
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