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Non-volatile memory device e.g. electrically EPROM (EEPROM) for portable computer has circuit which simultaneously applies voltage signals having same rising slope over defined period of time, to selected and unselected word lines
Non-volatile memory device e.g. electrically EPROM (EEPROM) for portable computer has circuit which simultaneously applies voltage signals having same rising slope over defined period of time, to selected and unselected word lines
The non-volatile memory device (100) has a three-dimensional (3D) memory cell array (110) having word lines (WL) that extend from lowest memory cell array layer to highest memory cell array farthest from substrate. A high voltage generator (120) generates voltage signals (VS-1,VS-2) while a row selecting circuit (130) simultaneously applies voltage signal (VS-1) to selected word line and applies voltage signal (VS-2) to unselected word line. The selected and unselected word lines have different resistances while applied voltage signals has same rising slope over defined period of time.
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