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Depositing a buffer layer on a copper indium selenide/sulfide (CIS) absorber layer of a CIS-thin layer solar cell comprises providing a solar cell slug, rinsing and treating it with an aqueous solution of a sulfur-donating substance
Depositing a buffer layer on a copper indium selenide/sulfide (CIS) absorber layer of a CIS-thin layer solar cell comprises providing a solar cell slug, rinsing and treating it with an aqueous solution of a sulfur-donating substance
Depositing a buffer layer having at least one sulfide of cadmium, indium, magnesium, zinc or tin on a copper indium selenide/sulfide (CIS) absorber layer comprises: (a) providing a solar cell slug; (b) treating the solar cell slug with an aqueous alkaline adsorber solution, at least one salt, a metal comprising cadmium, indium, magnesium, tin or zinc; (c) rinsing the solar cell slug with an aqueous alkaline rinsing solution; (d) treating the solar cell slug with an aqueous solution of a sulfur-donating substance; and (e) optionally multiple cyclic repeating of the steps (b)-(d). Depositing a buffer layer having at least one sulfide of cadmium, indium, magnesium, zinc or tin on a copper indium selenide/sulfide (CIS) absorber layer of a CIS-thin layer solar cell comprises providing a solar cell slug having a substrate deposited on a CIS-absorber layer; treating the solar cell slug at 30-90[deg] C with an aqueous alkaline adsorber solution, at least one salt, a metal comprising cadmium, indium, magnesium, tin or zinc of concentration 1-50 mmol/l; rinsing the solar cell slug with an aqueous alkaline rinsing solution; treating the solar cell slug at 30-90[deg] C with an aqueous solution of a sulfur-donating substance having a concentration of 30-120 mmol/l; and optionally multiple cyclic repeating of the steps (b)-(d) until full development of the buffer layer. An INDEPENDENT CLAIM is also included for the CIS thin layer solar cell prepared by the above method.
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