首页> 外国专利> Control critical dimensions in optical imaging processes for semiconductor fabrication by extracting aberrations based on imaging plant-specific intensity measurements and simulations

Control critical dimensions in optical imaging processes for semiconductor fabrication by extracting aberrations based on imaging plant-specific intensity measurements and simulations

机译：通过基于成像工厂特定的强度测量和模拟来提取像差，从而控制用于半导体制造的光学成像过程中的关键尺寸

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摘要

Fluctuations in the critical dimensions of circuit structural elements of complex semiconductor components can be prevented by efficiently extracting mask and / or imaging system-specific irregularities with high spatial resolution, using measured intensity values and simulated intensity values. For example, an on-site radiation sensor can be used to measure the intensity of an image of a lithography mask, while the simulated intensity values make it possible to eliminate intensity contributions specific to the mask pattern. In this way, the high spatial resolution of the corresponding correction map can be achieved without an undesirable outlay in terms of personnel and measuring system resources being required.

机译：通过使用测量的强度值和模拟的强度值有效地提取具有高空间分辨率的掩模和/或成像系统特定的不规则度，可以防止复杂的半导体组件的电路结构元件的关键尺寸出现波动。例如，现场辐射传感器可以用于测量光刻掩模的图像的强度，而模拟的强度值使得可以消除特定于掩模图案的强度贡献。以这种方式，可以实现相应的校正图的高空间分辨率，而无需在人员和测量系统资源方面的不期望的支出。

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公开/公告号DE102010030758A1

专利类型
公开/公告日2012-01-05

原文格式PDF
申请/专利权人 GLOBALFOUNDRIES DRESDEN MODULE ONE LIMITED LIABILITY COMPANY & CO. KG 01109 DRESDEN DE;GLOBALFOUNDRIES INC. GRAND CAYMAN KY;
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申请/专利号DE20101030758
发明设计人 ROLING STEFAN 01109 DRESDEN DE;SELTMANN ROLF 01069 DRESDEN DE;WEISBUCH FRANCOIS 01099 DRESDEN DE;
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申请日2010-06-30
分类号G03F7/20;
国家 DE
入库时间 2022-08-21 17:05:32

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