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Combined semiconductor detectors X-RAY

机译：组合式半导体探测器X-RAY

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摘要

FIELD: physics.;SUBSTANCE: X-ray radiation is detected using a composite semiconductor X-ray detector which consists of two or more X-ray detectors, an electronic system which prevents detection of simultaneous pulses or summation of energies of simultaneously detected pulses. A Si detector is located closer to the radiation source and an AsGa or CdTe detector is located further from the radiation source. If an AsGa detector is used, the thickness of the Si detector must lie in the range of 0.2-1 mm, and in the range of 0.5-1.5 mm if a CdTe detector is used.;EFFECT: low probability of detecting photons in photo loss peaks of As and Ga for an AsGa detector far from the radiation source and photo loss peaks of Cd and Te for a CdTe detector far from the radiation source.

机译：领域：物理;物质：使用由两个或多个X射线检测器组成的复合半导体X射线检测器检测X射线辐射，该电子系统可防止同时脉冲的检测或同时检测到的脉冲能量的总和。 Si探测器位于更靠近辐射源的位置，而AsGa或CdTe探测器位于距辐射源更远的位置。如果使用AsGa探测器，则Si探测器的厚度必须在0.2-1 mm的范围内，如果使用CdTe探测器则必须在0.5-1.5 mm的范围内;效果：在光子中探测光子的可能性低远离辐射源的AsGa探测器的As和Ga的损耗峰和远离辐射源的CdTe探测器的Cd和Te的光损耗峰。

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公开/公告号RU2011117675A

专利类型
公开/公告日2012-11-10

原文格式PDF
申请/专利权人 ФЕДЕРАЛЬНОЕ ГОСУДАРСТВЕННОЕ БЮДЖЕТНОЕ ОБРАЗОВАТЕЛЬНОЕ УЧРЕЖДЕНИЕ ВЫСШЕГО ПРОФЕССИОНАЛЬНОГО ОБРАЗОВАНИЯ ИРКУТСКИЙ ГОСУДАРСТВЕННЫЙ УНИВЕРСИТЕТ ПУТЕЙ СООБЩЕНИЯ (ФГБОУ ВПО ИРГУПС) (RU);
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申请/专利号RU20110117675
发明设计人 ПОРТНОЙ АЛЕКСАНДР ЮРЬЕВИЧ (RU);СИДОРОВА ЮЛИЯ ИВАНОВНА (RU);ПАВЛИНСКИЙ ГЕЛИЙ ВЕНИАМИНОВИЧ (RU);ГОРБУНОВ МИХАИЛ СЕРГЕЕВИЧ (RU);
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申请日2011-05-03
分类号G01T1/00;
国家 RU
入库时间 2022-08-21 17:06:34

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