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Method for manufacturing graphene semiconductor device, graphene semiconductor device manufactured by the same, graphene transistor comprising the graphene semiconductor device
Method for manufacturing graphene semiconductor device, graphene semiconductor device manufactured by the same, graphene transistor comprising the graphene semiconductor device
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机译：石墨烯半导体器件的制造方法，由其制造的石墨烯半导体器件，包括该石墨烯半导体器件的石墨烯晶体管
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摘要
PURPOSE: A graphene semiconductor device and a manufacturing method thereof are provided to economically form a graphene transistor. CONSTITUTION: Graphene(102) is formed on a substrate(101) under the oxygen atmosphere. A laser beam is irradiated to the graphene. The substrate is a SiC substrate. Carbon of the SiC substrate is evaporated by the laser beam. The graphene is pattered by irradiating the graphene with the laser beam and a graphene semiconductor device is manufactured. The patterned graphene has a nano ribbon-shape. The width of the nano ribbon is less than 10nm. Source and drain domains in which impurities are doped are formed by irradiating both ends of the graphene semiconductor device with the laser beam.
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