首页> 外国专利> METHOD FOR FORMING AMORPHOUS CARBON FILM, AMORPHOUS CARBON FILM, MULTILAYER RESIST FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND COMPUTER-READABLE RECORDING MEDIUM

METHOD FOR FORMING AMORPHOUS CARBON FILM, AMORPHOUS CARBON FILM, MULTILAYER RESIST FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND COMPUTER-READABLE RECORDING MEDIUM

机译:非晶碳膜的形成方法,非晶碳膜,多层电阻膜,半导体装置的制造方法以及计算机可读取的介质

摘要

upper electrode and the lower electrode is arranged in the processing vessel of the parallel plate type plasma CVD apparatus for use , and providing a step, carbon monoxide and an inert gas into the processing container for placing a substrate on the lower electrode , and also applies a high frequency power to at least the upper electrode by the decomposition of carbon monoxide generated by the plasma, and film formation by depositing the amorphous carbon on the substrate that a step . The top electrode is preferably a carbon electrode .
机译:上电极和下电极布置在使用的平行板式等离子体CVD装置的处理容器中,并向处理容器中提供台阶,一氧化碳和惰性气体以将基板放置在下电极上,并且通过等离子体产生的一氧化碳的分解,向至少上电极提供高频功率,并且通过在基板上沉积无定形碳的步骤形成膜。顶部电极优选是碳电极。

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