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METHOD FOR FORMING A FILM BY ATOMIC LAYER DEPOSITION AND METHOD FOR GEOMETRICALLY CONTROLLING FILM GROWTH BY ATOMIC LAYER DEPOSITION
METHOD FOR FORMING A FILM BY ATOMIC LAYER DEPOSITION AND METHOD FOR GEOMETRICALLY CONTROLLING FILM GROWTH BY ATOMIC LAYER DEPOSITION
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机译：通过原子层沉积形成膜的方法和通过原子层沉积几何控制膜生长的方法
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摘要
A method for forming a film by atomic layer deposition wherein vertical growth of a film is controlled, includes: (i) adsorbing a metal-containing precursor for film formation on a concave or convex surface pattern of a substrate; (ii) oxidizing the adsorbed precursor to form a metal oxide sub-layer; (iii) adsorbing a metal-free inhibitor on the metal oxide sub-layer more on a top/bottom portion than on side walls of the concave or convex surface pattern; and (iv) repeating steps (i) to (iii) to form a film constituted by multiple metal oxide sub-layers while controlling vertical growth of the film by step (iii). The adsorption of the inhibitor is antagonistic to next adsorption of the precursor on the metal oxide sub-layer
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