METHOD FOR MANUFACTURING A RESISTANCE CHANGEABLE MEMORY DEVICE INCLUDING A PLURALITY OF RESISTANCE CHANGEABLE MATERIAL PATTERNS

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  机译： 形成相变材料层的方法，制造相变存储单元的方法以及制造相变半导体存储器件的方法

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  机译： 形成相变材料层的方法，制造相变存储单元的方法以及制造相变半导体存储器件的方法

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  机译： 形成相变材料层的方法以及使用该相变材料层制造相变存储器单元和相变存储器装置的方法

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