首页> 外国专利> SUBSTRATE PROCESSING METHOD FOR DEVELOPMENT-PROCESSING AN ENTIRE SURFACE OF A WAFER TO HAVE HIGH UNIFORMITY, A COMPUTER STORAGE MEDIUM, AND A SUBSTRATE PROCESSING APPARATUS

SUBSTRATE PROCESSING METHOD FOR DEVELOPMENT-PROCESSING AN ENTIRE SURFACE OF A WAFER TO HAVE HIGH UNIFORMITY, A COMPUTER STORAGE MEDIUM, AND A SUBSTRATE PROCESSING APPARATUS

机译:用于开发处理晶圆整体表面的均匀性的方法,该晶圆具有高的均匀性,一种计算机存储介质以及一种基板处理装置

摘要

PURPOSE: A substrate processing method, a computer storage medium, and a substrate processing apparatus are provided to reduce defects on a surface of a substrate by eliminating bubbles generated between the substrate and surface treatment solution when the surface treatment solution is supplied on the substrate.;CONSTITUTION: Surface treatment solution is provided to one spot of a peripheral area of a substrate(W) from a nozzle(40). The liquid pool(Pa) of the surface treatment solution is formed. The nozzle moves from a peripheral area of the substrate to a central portion of the substrate by continuously supplying the surface treatment solution. The liquid pool formed in the peripheral area of the substrate moves to the central portion of the substrate. The surface treatment solution is pure water(P).;COPYRIGHT KIPO 2012
机译:目的:提供一种基板处理方法,计算机存储介质和基板处理设备,以通过消除当在基板上供应表面处理溶液时在基板和表面处理溶液之间产生的气泡来减少基板表面上的缺陷。组成:从喷嘴(40)向基板(W)外围区域的一个点提供表面处理溶液。形成表面处理溶液的液池(Pa)。通过连续地供应表面处理溶液,喷嘴从基板的外围区域移动到基板的中央部分。在基板的外围区域中形成的液体池移动到基板的中央部分。表面处理溶液是纯水(P)。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20120049808A

    专利类型

  • 公开/公告日2012-05-17

    原文格式PDF

  • 申请/专利权人 TOKYO ELECTRON LIMITED;

    申请/专利号KR20110113133

  • 发明设计人 YOSHIDA YUICHI;TAKEGUCHI HIROFUMI;

    申请日2011-11-02

  • 分类号H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-21 17:10:01

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