首页>
外国专利>
METHOD FOR MANUFACTURING GRAPHENE USING LASER, GRAPHENE MANUFACTURED BY THE SAME, AND AN APPARATUS FOR MANUFACTURING THE SAME CAPABLE OF SUBLIMATING SILICON ON A SILICON CARBIDE SUBSTRATE AND GROWING GRAPHENE
METHOD FOR MANUFACTURING GRAPHENE USING LASER, GRAPHENE MANUFACTURED BY THE SAME, AND AN APPARATUS FOR MANUFACTURING THE SAME CAPABLE OF SUBLIMATING SILICON ON A SILICON CARBIDE SUBSTRATE AND GROWING GRAPHENE
PURPOSE: A method for manufacturing graphene using laser, graphene manufactured by the same, and an apparatus for manufacturing the same are provided to manufacture a large sized graphene mono layer by varying the irradiating region of laser beam.;CONSTITUTION: Laser beam is irradiated to a silicon carbide substrate(101). Silicon on the silicon carbide substrate is sublimated based on the irradiated laser beam. Remaining carbon is grown as a graphene structure. According to the movement of the silicon carbide substrate, a laser beam-based graphene growing region is moved. According to the movement of the laser beam, the laser beam-based graphene growing region is moved. A temperature for growing the graphene is in a range between 900 and 2000 degrees Celsius.;COPYRIGHT KIPO 2012
展开▼
