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ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT OF A SEMICONDUCTOR APPARATUS CAPABLE OF IMPROVING ELECTROSTATIC DISCHARGE PROTECTION PERFORMANCE
ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT OF A SEMICONDUCTOR APPARATUS CAPABLE OF IMPROVING ELECTROSTATIC DISCHARGE PROTECTION PERFORMANCE
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机译：具有改善静电放电保护性能的半导体装置的静电放电保护电路
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摘要
PURPOSE: An electrostatic discharge protection circuit of a semiconductor apparatus is provided to eliminate resistors for pull-up and pull-down processes, thereby improving IBIS(Input/output Buffer Interface Specification) characteristics.;CONSTITUTION: An output driver(310) for a pull-up process outputs an internal signal to the outside through an input/output pad. An electrostatic discharge protection part(316) provides a first electrostatic discharge path between a high power source line and a low power source line. An electrostatic discharge path supply part selectively supplies a second electrostatic discharge path between the high power source line and the low power source line. A control signal generation part(320) generates a control signal which has a predetermined voltage level between voltage levels of the high power source line and the low power source line according to a detection result. An operation control part for the pull-up process controls the operation of the output driver for the pull-up process in response to a control signal.;COPYRIGHT KIPO 2012
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