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TDDB TEST STRUCTURE OF A SEMICONDUCTOR DEVICE AND TDDB TESTING METHOD CAPABLE OF APPLYING A MEASUREMENT VOLTAGE TO A FIRST TEST CELL AND A SECOND TEST CELL WITHOUT INTERFERENCE
TDDB TEST STRUCTURE OF A SEMICONDUCTOR DEVICE AND TDDB TESTING METHOD CAPABLE OF APPLYING A MEASUREMENT VOLTAGE TO A FIRST TEST CELL AND A SECOND TEST CELL WITHOUT INTERFERENCE
PURPOSE: A TDDB(Time Dependent Dielectric Breakdown) test structure of a semiconductor device and a TDDB testing method are provided to shorten the measurement time of a TDDB test by measuring a plurality of test cells including a test pattern.;CONSTITUTION: A first test cell(1) and a second test cell(3) are arranged on a substrate(10). The first test cell includes a first test pattern(23). The first test pattern includes a first dielectric layer(20a) and a first gate electrode(22a). A second test cell includes a second test pattern(25). The second test pattern includes a second dielectric layer(20b) and a gate electrode(22b).;COPYRIGHT KIPO 2012
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