c) injecting into the reaction chamber an oxygen source selected in the list:oxygen, ozone, oxygen plasma, water, CO2 plasma, N2O plasma;d) reacting at a temperature comprised between 20°C and 400°C, preferably lower or equal to 250°C, into the reaction chamber at least one of the silicon containing compounds and the oxygen source in order to obtain the SiO2 layer deposited onto the substrate;e) injecting on said silicon oxide film, through an ALD process, at least one aluminum containing compound of formula Al(Me)2(OiPr);f) injecting the oxygen source as defined in step c);g) reacting at a temperature comprised between 20°C and 400°C, preferably lower or equal to 250°C, into the reaction chamber at least one of the aluminium containing compounds and the oxygen source in order to obtain the Al2O3 layer deposited onto the SiO2 layer issued of step d)."/>
Method of deposition of Al2O3/SiO2 stacks from DMAI and silicon precursors
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Method of deposition of Al2O3/SiO2 stacks from DMAI and silicon precursors
Method of deposition of Al2O3/SiO2 stacks from DMAI and silicon precursors
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机译：由DMAI和硅前驱体沉积Al2O3 / SiO2叠层的方法
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摘要
A method of forming an Al2O3/SiO2 stack comprising successively the steps of:a) providing a substrate into a reaction chamber;b) injecting into the reaction chamber, through an ALD process, at least one silicon containing compound selected from the group consisting of:
c) injecting into the reaction chamber an oxygen source selected in the list:oxygen, ozone, oxygen plasma, water, CO2 plasma, N2O plasma;d) reacting at a temperature comprised between 20°C and 400°C, preferably lower or equal to 250°C, into the reaction chamber at least one of the silicon containing compounds and the oxygen source in order to obtain the SiO2 layer deposited onto the substrate;e) injecting on said silicon oxide film, through an ALD process, at least one aluminum containing compound of formula Al(Me)2(OiPr);f) injecting the oxygen source as defined in step c);g) reacting at a temperature comprised between 20°C and 400°C, preferably lower or equal to 250°C, into the reaction chamber at least one of the aluminium containing compounds and the oxygen source in order to obtain the Al2O3 layer deposited onto the SiO2 layer issued of step d).
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机译：一种形成Al 2 O 3 / SiO 2 叠层的方法，依次包括以下步骤：a）提供衬底到反应室中;b）通过ALD法将至少一种选自以下的含硅化合物注入到反应室中：
