PROGRAMMABLE ARRAY OF SILICON NANOWIRE METAL-OXIDE-SILICON FIELD EFFECT TRANSISTOR DEVICE AND PREPARATION METHOD THEREFOR

• 1. 一种硅漂移探测器与金属氧化物半导体场效应晶体管集成器件 [P] . 中国专利： CN212342629U . 2021-01-12
• 2. 一种硅漂移探测器与金属氧化物半导体场效应晶体管集成器件 [P] . 中国专利： CN112071874A . 2020-12-11
• 3. Programmable array of silicon nanowire field effect transistor and method for fabricating the same [P] . 美国专利： US9099500B2 . 2015-08-04

  机译： 硅纳米线场效应晶体管的可编程阵列及其制造方法

• 4. A programmable array of a field effect transistor silicon nanowire and method for the production thereof [P] . 德国专利： DE112011105142T5 . 2014-03-13

  机译： 场效应晶体管硅纳米线的可编程阵列及其制造方法

• 5. PROGRAMMABLE ARRAY OF SILICON NANOWIRE FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME [P] . 美国专利： US2013075701A1 . 2013-03-28

  机译： 硅纳米线场效应晶体管的可编程阵列及其制造方法

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