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TIME AND WORKLOAD DEPENDENT CIRCUIT SIMULATION.

机译：时间和工作量依赖的电路仿真。

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An atomistic approach to introducing time-dependent variability into a circuit simulator in a realistic manner. The approach is based on previously proven physics of stochastic properties of individual gate oxide defects and their impact on operation of individual devices, such as FETs, within the circuit. Each individual device is assigned a number of defects on a statistical basis, and their degrading effect on a device characteristic, such as threshold voltage, is followed over a defined operation time and under realistic workloads. A performance metric of the circuit, such as a delay time, is analyzed by considering the effects of the degradation of the individual devices. The method of the invention is capable of following defects with widely distributed time scales (from fast to quasi-permanent), thus seamlessly integrating random telegraph noise (RTN) effects with bias temperature instability (BTI). The employment of existing industry-standard circuit simulator tools (10, 50, 60) ensures correct combination of the deterministic workload-dependent component with the stochastic modelling aspect while simultaneously incorporating interactions among different devices. The atomistic property of the utilized model allows the detection of workload dependency in performance metrics such as the delay of a circuit.
机译：一种原子方法，以逼真的方式将时间相关的可变性引入电路模拟器。该方法基于先前证明的单个栅极氧化物缺陷的随机特性及其对电路内单个器件（例如FET）的操作的影响的物理学。在统计的基础上，为每个单独的设备分配了许多缺陷，并且在定义的操作时间和实际工作量下，跟踪它们对设备特性（例如阈值电压）的影响。通过考虑各个器件性能下降的影响来分析电路的性能指标，例如延迟时间。本发明的方法能够以广泛分布的时间尺度（从快速到准永久）跟踪缺陷，从而将随机电报噪声（RTN）效应与偏置温度不稳定性（BTI）无缝地集成。使用现有的行业标准电路仿真器工具（10、50、60）可确保确定性工作负载相关组件与随机建模方面的正确组合，同时并入不同设备之间的交互。利用的模型的原子性允许检测性能指标中的工作负载依赖性，例如电路的延迟。

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