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首页> 外国专利> STRONG PHOTOLUMINESCENCE ENHANCEMENT OF SILICON QUANTUM DOTS DUE TO THE PRESENCE OF A SILVER NANOPARTICLE SURFACE PLASMON, BOTH EMBEDDED IN SILICA.

STRONG PHOTOLUMINESCENCE ENHANCEMENT OF SILICON QUANTUM DOTS DUE TO THE PRESENCE OF A SILVER NANOPARTICLE SURFACE PLASMON, BOTH EMBEDDED IN SILICA.

机译：硅量子点的强烈光致发光增强，这是由于硅纳米粒子存在于二氧化硅中。

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Integral device which consists in a matrix of ultra-high purity synthetic silicon with silicon quantum dots arranged therein at a controlled distance of a NPs arrangement of Ag, which may present spherical or spheroid symmetry shapes. For this last arrangement, the main axis of the NPs may be oriented in the same direction in a controlled manner, which may be varied from about 0° to about 80° with regard to the normal direction of the matrix. The integral material has a luminosity, which intensity is several times higher than that presented by silicon quantum dots in silica. Regarding the spheroid Ag NPs, the luminosity may be varied by controlling the polarization of the incident light. The present invention solves the problem of integrating, in a single matrix, the nanometric light emitter and the nanometric amplifier thereof. The potential use of the invention is in opto-electronic nano-devices such as the lab-on-a-chip.
机译：整体装置，由超高纯度合成硅矩阵组成，在该矩阵中，在Ag的NPs排列的受控距离处排列有硅量子点，可以呈现球形或椭球形的对称形状。对于最后一种布置，NP的主轴可以以受控的方式沿相同的方向定向，相对于矩阵的法线方向，其可以在约0°至约80°之间变化。整体材料具有发光度，其强度是二氧化硅中硅量子点所呈现出的强度的几倍。关于球形Ag NP，可以通过控制入射光的偏振来改变发光度。本发明解决了将纳米级光发射器及其纳米级放大器集成在单个矩阵中的问题。本发明的潜在用途是在光电纳米器件中，例如芯片实验室。

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