Multiple-gate MOS transistor using Si substrate and method of manufacturing the same

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  机译： 使用硅基板的多栅极MOS晶体管及其制造方法

• 4. Multiple-gate MOS transistor using Si substrate and method of manufacturing the same [P] . 美国专利： US7605039B2 . 2009-10-20

  机译： 使用Si衬底的多栅MOS晶体管及其制造方法

• 5. Multiple-gate MOS transistor using the Si substrate and a method for manufacturing the same [P] . 韩国专利： KR100696197B1 . 2007-03-20

  机译： 使用Si衬底的多栅MOS晶体管及其制造方法

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