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System for analyzing sensitivity of parasitic capacitance to variation of semiconductor design parameters

机译:用于分析寄生电容对半导体设计参数变化的敏感性的系统

摘要

A sensitivity analysis system has a memory device in which an interconnect structure data indicating an interconnect structure included in a semiconductor device is stored. The interconnect structure has: a main interconnection; and a contact structure electrically connected to the main interconnection and extending toward a semiconductor substrate. Parameters contribute to parasitic capacitance of the interconnect structure, and variation of each parameter from a design value caused by manufacturing variability is represented within a predetermined range. The sensitivity analysis system further has: a parameter setting unit that sets the variation to a plurality of conditions within the predetermined range; a capacitance calculation unit that calculates the parasitic capacitance of the interconnect structure in each of the plurality of conditions; and a sensitivity analysis unit that analyzes, based on the calculated parasitic capacitance, response of the parasitic capacitance to variation of the each parameter.
机译:灵敏度分析系统具有存储装置,在该存储装置中存储有表示半导体装置所具有的互连结构的互连结构数据。互连结构具有:主互连;接触结构电连接到主互连并向半导体衬底延伸。参数有助于互连结构的寄生电容,并且在预定范围内表示每个参数相对于由制造可变性引起的设计值的变化。灵敏度分析系统还具有:参数设置单元,其将变化设置为预定范围内的多个条件;以及电容计算单元,其在所述多个条件中的每一个条件下计算所述互连结构的寄生电容;灵敏度分析单元基于计算出的寄生电容来分析寄生电容对每个参数的变化的响应。

著录项

  • 公开/公告号US8161443B2

    专利类型

  • 公开/公告日2012-04-17

    原文格式PDF

  • 申请/专利权人 YOSHIHIKO ASAI;

    申请/专利号US20100688103

  • 发明设计人 YOSHIHIKO ASAI;

    申请日2010-01-15

  • 分类号G06F17/50;

  • 国家 US

  • 入库时间 2022-08-21 17:28:15

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