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LOW CROSSTALK, FRONT-SIDE ILLUMINATED, BACK-SIDE CONTACT PHOTODIODE ARRAY

机译:低交叉,正面发光,背面接触式光电二极管阵列

摘要

The present application is directed to novel front side illuminated, back side contact photodiodes and arrays thereof. In one embodiment, the photodiode has a substrate with at least a first and a second side and a plurality of electrical contacts physically confined to the second side. The electrical contacts are in electrical communication with the first side through a doped region of a first type and a doped region of a second type, each of the regions substantially extending from the first side through to the second side. In another embodiment, the photodiode comprises a wafer with at least a first and a second side; and a plurality of electrical contacts physically confined to the second side, where the electrical contacts are in electrical communication with the first side through a diffusion of a p+ region through the wafer and a diffusion of an n+ region through the wafer.
机译:本申请针对新颖的正面照明的,背面接触光电二极管及其阵列。在一个实施例中,光电二极管具有基板,该基板具有至少第一侧面和第二侧面以及物理地限制在第二侧面中的多个电触点。电触点通过第一类型的掺杂区域和第二类型的掺杂区域与第一侧电连通,每个区域基本上从第一侧延伸到第二侧。在另一个实施例中,光电二极管包括具有至少第一侧面和第二侧面的晶片;以及第二晶片。多个电触点物理地限制在第二侧,其中,电触点通过p +区域通过晶片的扩散和n +区域通过晶片的扩散与第一侧电连通。

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