首页>
外国专利>
Method for measuring the temperature rise induced by bias current/bias voltage in a magnetic tunnel junction
Method for measuring the temperature rise induced by bias current/bias voltage in a magnetic tunnel junction
展开▼
机译：测量磁性隧道结中由偏置电流/偏置电压引起的温升的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for measuring the temperature rise induced by bias current/bias voltage in a magnetic tunnel junction, the method includes the steps of: (a) applying an external time-changing magnetic field to the magnetic tunnel junction; (b) measuring different first outer pin flip field values under different temperature values; (c) calculating the correlation between the temperature and the outer pin flip field according to the temperature values and the first outer pin flip field values; (d) measuring different second outer pin flip field values under different bias current/bias voltage values; (e) calculating the correlation between the bias current/bias voltage and the outer pin flip field according to the bias current/bias voltage values and the second outer pin flip field values; (f) calculating the correlation between the temperature and the bias current/bias voltage according to the results produced by the steps (c) and (e). The method of the present invention can obtain the correlation between the temperature and the bias current/bias voltage, thereby determining what kind of TMR reader design providing more stable and reliable reading performance especially under higher operational temperature.
展开▼
