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The nano- wire field-effect transistor and its production method, and the integrated circuit which includes this
The nano- wire field-effect transistor and its production method, and the integrated circuit which includes this
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机译：纳米线场效应晶体管及其制造方法以及包括该纳米线场效应晶体管的集成电路
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摘要
2 columellas which on the baseplate, consist of silicon crystal, form the nano- wire, the nano- wire field-effect transistor which features that it is arranged parallel with the surface of the said baseplate and top, and (100) processing the silicon crystal which forms process and the SOI layer which prepare the SOI baseplate which has surface direction, with process and crystal anisotropic etching which are made the section rectangular plate shaped body which stands up said silicon crystal, 2 triangular columellas through that ridge, segregating mutually, in order to oppose, the process which processes to the form which is arranged in the top and bottom and saidProduction method of the nano- wire field-effect transistor which includes the process which is made the cylindrical condition body which hydrogen annealing or heat oxidizes 2 triangular columellas and forms the nano- wire, and the integrated circuit which includes this.
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