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Broad stripe semiconductor laser device and a broad stripe semiconductor laser array using the same, and method for producing a broad stripe semiconductor laser device
Broad stripe semiconductor laser device and a broad stripe semiconductor laser array using the same, and method for producing a broad stripe semiconductor laser device
PROBLEM TO BE SOLVED: To provide a semiconductor laser element capable of ensuring high output operation by providing a window region and of improving the shape accuracy of a protruded striped part and reproducibility in a manufacturing process.;SOLUTION: The width W1 of the protruded striped part 20 in an end face neighborhood region 30A including a window region 30 is made larger than the width W2 in an element internal region 30B other than the end face neighborhood region 30A. The protruded striped part 20 is not extended in the end face neighborhood region 30A including the window structure 30, and a p-type third clad layer 17 is left behind. Also, when there is provided the window region 30 for high output power, it is possible to improve the shape accuracy of the protruded striped part 20 in the end face neighborhood region 30A including the window region 30 to stabilize a horizontal transverse mode and reduce a transverse beam radiation angle.;COPYRIGHT: (C)2006,JPO&NCIPI
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