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GaN-based LED element, the manufacturing method and the GaN-based LED element for manufacturing a template of a GaN-based LED element

机译:GaN基LED元件,制造方法以及用于制造GaN基LED元件的模板的GaN基LED元件

摘要

PROBLEM TO BE SOLVED: To provide a GaN based LED element having a new structure with light extraction efficiency increased.;SOLUTION: The GaN based LED element 100 includes a laminate structure containing a substrate 10, a first layer 11 consisting of a GaN based semiconductor, and a second layer 12 consisting of the GaN based semiconductor and containing an emission member in this order. It includes a void S formed in the first layer 11, and an end surface 11a in the first layer 11 formed with wet-etching and slanted so as to direct to the substrate side is exposed inside the void S. In addition, the substrate 10 is exposed inside the void S.;COPYRIGHT: (C)2009,JPO&INPIT
机译:解决的问题:提供具有提高光提取效率的新结构的GaN基LED元件;解决方案:GaN基LED元件100包括包含衬底10,由GaN基半导体组成的第一层11的层压结构。 ;和第二层12,其由GaN基半导体组成并且依次包含发射构件。它包括在第一层11中形成的空隙S,并且在第一层11中通过湿法蚀刻形成并倾斜以指向基板侧的端面11a暴露在空隙S内部。此外,基板10暴露在空隙S内。版权所有:(C)2009,JPO&INPIT

著录项

  • 公开/公告号JP5045418B2

    专利类型

  • 公开/公告日2012-10-10

    原文格式PDF

  • 申请/专利权人 三菱化学株式会社;

    申请/专利号JP20070328159

  • 发明设计人 平岡 晋;

    申请日2007-12-20

  • 分类号H01L33/32;

  • 国家 JP

  • 入库时间 2022-08-21 17:37:35

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