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A method of forming an in-situ pre--GaN deposited layer in HVPE
A method of forming an in-situ pre--GaN deposited layer in HVPE
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机译：在HVPE中形成原位预GaN沉积层的方法
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摘要
Method and apparatus for providing a substrate for forming an electronic device incorporating a Group III / V compound semiconductor is provided. Halide gas or halogen gas other elemental halogen gas, or a hydrogen halide gas, is in contact with the group III metal in liquid or solid precursor for depositing a nitride buffer layer on a substrate by reacting with the nitrogen source I want to form a substance. Buffer layer may be a transition layer may be able to incorporate the group III metals multiple, is deposited in crystalline form or amorphous form. I can be completely recrystallized or in part by the heat treatment, the amorphous layer. It is possible that instead of the layer, to form nucleation sites a plurality of separate, the size, density, and to control the distribution. Nitrogen sources can include active nitrogen from the remote plasma source and reactive nitrogen compound. The composition of the transition layer or buffer layer can be changed by the depth according to the desired profile.
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