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首页> 外国专利> single crystal of highly purified hexagonal bornitrid, the rays of light in deep ultraviolet light with high luminance is allowed, method forlight in the deep ultraviolet light with high luminance light-emitting device and verofflichtemissionseinheit

single crystal of highly purified hexagonal bornitrid, the rays of light in deep ultraviolet light with high luminance is allowed, method forlight in the deep ultraviolet light with high luminance light-emitting device and verofflichtemissionseinheit

机译：高纯度六方氮化硼的单晶，允许在高亮度的深紫外光中照射光线，在高亮度的深紫外光中发光的方法以及发光装置

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摘要

A single crystal of highly purified hexagonal boron nitride not influenced by impurities and capable of high-luminance short wave ultraviolet light emission reflecting inherent characteristics; a high-luminance ultraviolet light emitting device including the above single crystal; and utilizing the above device, a simple compact low-cost prolonged-life far ultraviolet solid laser and far ultraviolet solid light emitting unit. A single crystal of highly purified hexagonal boron nitride having a single light emission peak in the far ultraviolet region of up to 235 nm wavelength is produced by in the presence of a solvent of high purity, subjecting a raw material of boron nitride crystal to high-temperature high-pressure single crystal melting followed by crystallization. A light emitting device or light emitting layer comprised of the obtained single crystal is excited with electron beams, and the thus generated far ultraviolet radiation is resonated or without resonation is take out.
机译：一种高度纯净的六方氮化硼单晶，不受杂质影响，能够发出反映固有特性的高亮度短波紫外光;包括上述单晶的高亮度紫外发光器件;利用上述装置，可以得到一种简单，紧凑，低成本，长寿命的远紫外线固体激光器和远紫外线固体发光单元。通过在高纯度溶剂的存在下，对氮化硼晶体的原料进行高纯度的处理，可以制得在波长高达235 nm的远紫外区域具有单个发光峰的高纯度六方氮化硼单晶。高温高压下单晶熔融后结晶。由电子束激发由所获得的单晶构成的发光器件或发光层，并且使由此产生的远紫外线辐射共振或不共振。

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