首页> 外国专利> Solar cell with contact structure with small recombination losses as well as methods for manufacturing such solar cells

Solar cell with contact structure with small recombination losses as well as methods for manufacturing such solar cells

机译:具有低复合损失的接触结构的太阳能电池及其制造方法

摘要

A concept is for a highly efficient solar cell, in particular on the basis of high-quality crystalline silicon, as well as a process for producing such a solar cell is proposed. In the case of the solar cell (1), a contact structure (3) with the aid of a layers stack arrangement is formed, which a first layer (19) of an electrically insulating material, a second layer (21) is made of a semiconductor material and a third layer (22) are made of an electrically conductive material. The first dielectric layer is in this case, between the substrate (17) and the second semiconducting layer (21) arranged and designed in such a way that a significant tunnels of charge carriers between the substrate (17) and the second layer (21) through the first layer (19) is made possible through. The semiconductor material of the solar cells substrate and the semiconductor material of the second layer due to different band structures have different electrical properties. In this way, a electrons - / hole - selectivity of the tunnel process within the contact structure, can be influenced as a result of recombination losses caused by the contact structure can be reduced significantly.
机译:提出了一种用于高效太阳能电池的概念,特别是基于高质量晶体硅的太阳能电池,并且提出了一种生产这种太阳能电池的方法。在太阳能电池(1)的情况下,借助于叠层结构形成接触结构(3),其由电绝缘材料的第一层(19),第二层(21)制成。半导体材料和第三层(22)由导电材料制成。在这种情况下,第一介电层在衬底(17)和第二半导体层(21)之间被布置和设计成使得电荷载流子在衬底(17)和第二层(21)之间的显着隧穿。通过第一层(19)成为可能。由于带结构不同,太阳能电池基板的半导体材料和第二层的半导体材料具有不同的电特性。以此方式,由于可以显着减少由接触结构引起的复合损失,因此可以影响接触结构内的隧道工艺的电子//空穴选择性。

著录项

  • 公开/公告号DE102009024598A1

    专利类型

  • 公开/公告日2011-01-05

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE20091024598

  • 发明设计人

    申请日2009-06-10

  • 分类号H01L31/078;H01L31/072;H01L31/07;H01L31/0224;H01L31/18;

  • 国家 DE

  • 入库时间 2022-08-21 17:47:51

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