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Manufacturing method for flexible device, flexible device manufactured by the same, manufacturing method for flexible piezoelectric device, flexible capacitor, and flexible piezoelectric device, flexible capacitor manufactured by the same
Manufacturing method for flexible device, flexible device manufactured by the same, manufacturing method for flexible piezoelectric device, flexible capacitor, and flexible piezoelectric device, flexible capacitor manufactured by the same
Provided are a method of manufacturing a flexible device, a method of manufacturing a flexible device, a flexible piezoelectric device, and a capacitor device, and a flexible piezoelectric device and a capacitor device manufactured thereby.;A flexible device manufacturing method according to the present invention comprises the steps of laminating a first metal layer on a silicon oxide layer on a silicon substrate; Stacking devices on the first metal layer; Annealing the first metal layer to oxidize the first metal to a first metal oxide; Etching the first metal oxide to separate the device and the silicon oxide layer; And transferring the separated device to the flexible substrate using a separate transfer layer, and the method of manufacturing the flexible device according to the present invention is different from the conventional method of etching the silicon substrate itself. The upper element is separated from the substrate by etching the metal oxide layer. As a result, physical loss of the silicon substrate may be prevented due to the progress of the process, and the high cost of using the single crystal silicon substrate may be reduced.
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