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Manufacturing method of stacking unit chip, 3D stacked chip using unit chip and manufacturing method therefor

机译:堆叠单元芯片的制造方法,使用该单元芯片的3d堆叠芯片及其制造方法

摘要

PURPOSE: A unit chip for a laminate, a manufacturing method thereof, a three dimensional lamination chip thereof, and a manufacturing method thereof are provided to improve productivity and to simplify a processing process by using a dicing process used for the cutting of a wafer. CONSTITUTION: A plurality of grooves are formed along the cutting line of a silicon wafer(161). Each insulating part is formed by filling the insulating materials in the grooves. A plurality of electrode pads(140) are formed on the upper side of the silicon wafer. The insulating part is exposed in the lower side of the silicon wafer. A unit chip(160) for lamination is formed by cutting the silicon wafer.
机译:用途:提供一种用于层压板的单元芯片,其制造方法,其三维层压芯片及其制造方法,以通过使用用于晶片切割的切割工艺来提高生产率并简化处理工艺。组成:沿着硅片(161)的切割线形成多个凹槽。每个绝缘部分通过将绝缘材料填充在凹槽中而形成。在硅晶片的上侧形成有多个电极焊盘(140)。绝缘部分暴露在硅晶片的下侧。通过切割硅晶片形成用于层叠的单元芯片(160)。

著录项

  • 公开/公告号KR101054492B1

    专利类型

  • 公开/公告日2011-09-02

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20090072326

  • 申请日2009-08-06

  • 分类号H01L21/60;H01L21/78;

  • 国家 KR

  • 入库时间 2022-08-21 17:50:00

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