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dry etching method and dry etching gas and the fluorescent 2 - pentyl issues extensive method
dry etching method and dry etching gas and the fluorescent 2 - pentyl issues extensive method
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机译：干法刻蚀法，干法刻蚀气体和荧光2-戊基问题广泛的方法
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摘要
resistance to the 195 u339a in wavelength than the first radiation to survey the following two u339a resistance pattern formation and etching gas furnace, and one or more unsaturated bond with a carbon number of 4 ~ 6 in the fluorine compound using the resistance pattern. the etching is a dry etching method to form. in the fluorine compound with the fluorescent 2 - pentyl or green fluorescent 2 - a young, old or fluorescent 2 - pentene and green fluorescent 2 - pentene is welcomed in use. the fluorescent 2 - pentyl, 1, 1, 1 - the halo - 2, 2, 2 - three to five road ethane and a pen on the influenza lochia blood to formaldehyde to the reaction of 2 - to 1, 1, 1, 4, 4... five, five, five - to eight fluorescent pen to have a 2 - to win the market, and with 2 - to - 1, 1, 1, 4, 4, 5, 5,5 - eight fluorescent 2 - pentene to sit with you for the hydrogen treatment, the synthesis gas.
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