首页> 外国专利> METHOD FOR TREATING THE SURFACE OF A II-VI-GROUP COMPOUND-BASED SEMICONDUCTOR NANOCRYSTAL CAPABLE OF IMPROVING THE LIGHT EMITTING EFFICIENCY OF A CADMIUM SELENIDE NANOCRYSTAL

METHOD FOR TREATING THE SURFACE OF A II-VI-GROUP COMPOUND-BASED SEMICONDUCTOR NANOCRYSTAL CAPABLE OF IMPROVING THE LIGHT EMITTING EFFICIENCY OF A CADMIUM SELENIDE NANOCRYSTAL

机译:处理基于II-VI-GROUP化合物的半导体纳米表面的方法,该表面可提高硒化镉纳米晶体的发光效率

摘要

PURPOSE: A method for treating the surface of II-VI-group compound-based semiconductor nanocrystal is provided to reproducibly control the surface state of a cadmium selenide nanocrystal by implementing a tertiary phosphine-primary amine binary surface treatment.;CONSTITUTION: A method for treating the surface of a II-VI-group compound-based semiconductor nanocrystal includes the following: A II-VI-group compound-based semiconductor nanocrystal is dissolved in a solvent to obtain a solution. Tertiary phosphine and primary amine are added in the solution. The II-VI-group compound-based semiconductor nanocrystal is selected from a group including binary compounds, ternary compounds, and quaternary compounds. The binary compounds include CdSe, CdTe, ZnS, ZnSe, and ZnTe. The ternary compounds include CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, CdZnS, CdZnSe, and CdZnTe. The quaternary compounds include CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe.;COPYRIGHT KIPO 2012
机译:目的:提供一种处理基于II-VI族化合物的半导体纳米晶体的方法,以通过实施叔膦-伯胺二元表面处理可再现地控制硒化镉纳米晶体的表面状态。处理基于II-VI族化合物的半导体纳米晶体的表面包括以下步骤:将基于II-VI族化合物的半导体纳米晶体溶解在溶剂中以获得溶液。将叔膦和伯胺添加到溶液中。基于II-VI族化合物的半导体纳米晶体选自包括二元化合物,三元化合物和四元化合物的组。二元化合物包括CdSe,CdTe,ZnS,ZnSe和ZnTe。三元化合物包括CdSeS,CdSeTe,CdSTe,ZnSeS,ZnSeTe,ZnSTe,CdZnS,CdZnSe和CdZnTe。四元化合物包括CdZnSeS,CdZnSeTe,CdZnSTe,CdHgSeS,CdHgSeTe,CdHgSTe,HgZnSeS,HgZnSeTe和HgZnSTe。; COPYRIGHT KIPO 2012

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