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METHOD FOR FORMING A SAPPHIRE SURFACE PATTERN CAPABLE OF INCREASING THE CRYSTALLINITY OF A NITRIDE SEMICONDUCTOR LAYER, A METHOD FOR MANUFACTURING A NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME, AND THE NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
METHOD FOR FORMING A SAPPHIRE SURFACE PATTERN CAPABLE OF INCREASING THE CRYSTALLINITY OF A NITRIDE SEMICONDUCTOR LAYER, A METHOD FOR MANUFACTURING A NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME, AND THE NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
PURPOSE: A method for forming a sapphire surface pattern, a method for manufacturing a nitride semiconductor light emitting device using the same, and the nitride semiconductor light emitting device are provided to quickly and inexpensively form a sapphire surface pattern, thereby reducing total device processing time and processing costs.;CONSTITUTION: A sapphire substrate is prepared. The surface of the sapphire substrate is exposed without an etching mask. A gas of at least one of CI2 and HCL2 is supplied onto the surface of the surface of the sapphire substrate. The surface of the sapphire substrate is etched.;COPYRIGHT KIPO 2011
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