• 主题
高级搜索  >
历史搜索 清空历史
首页> 外国专利> RESIST SUBLAYER FORMING COMPOSITION, A RESIST SUBLAYER FORMING METHOD, AND A PATTERN FORMING METHOD CAPABLE OF IMPROVING THE ROUGHNESS OF PATTERNS AFTER AN ETCHING PROCESS WITHOUT INFLUENCING THE POSITION ARRANGEMENT OF AN EXPOSING PROCESS

RESIST SUBLAYER FORMING COMPOSITION, A RESIST SUBLAYER FORMING METHOD, AND A PATTERN FORMING METHOD CAPABLE OF IMPROVING THE ROUGHNESS OF PATTERNS AFTER AN ETCHING PROCESS WITHOUT INFLUENCING THE POSITION ARRANGEMENT OF AN EXPOSING PROCESS

机译：能够在不影响曝光过程的位置排列的情况下在蚀刻过程后提高图案的粗糙度的抗蚀剂亚层形成组合物，抗蚀剂亚层形成方法和图案形成方法

页面导航
  • 摘要
  • 著录项
  • 相似文献

摘要

PURPOSE: A resist sublayer forming composition, a resist sublayer forming method, and a pattern forming method are provided to prevent the generation of misalignment in an etching process with respect to a substrate. ;CONSTITUTION: A resist sublayer forming composition includes a resin, a compound, a fullerene compound, and an organic solvent. The compound is represented by chemical formula 1. The resin is obtained by condensing the compound and another compound represented by chemical formula 2. In the chemical formula 1, the R1 to the R4 is either of hydrogen or C6 to C22 hydrocarbon group. The hydrocarbon group is capable of including oxygen group or hydroxyl group. The R5 and the R6 are either of benzene ring or naphthalene ring. The value of m1+m2 is between 1 and 2, and the value of m3+m4 is between 1 and 2. The n1 and the n2 are respectively 0 or 1.;COPYRIGHT KIPO 2011
机译：目的：提供抗蚀剂子层形成用组合物，抗蚀剂子层形成方法和图案形成方法，以防止在蚀刻过程中相对于基板产生未对准。 ;组成：形成抗蚀剂亚层的组合物包括树脂，化合物，富勒烯化合物和有机溶剂。该化合物由化学式1表示。该树脂通过使该化合物与由化学式2表示的另一种化合物缩合而获得。在化学式1中，R 1至R 4为氢或C 6至C 22烃基。烃基能够包括氧基或羟基。 R5和R6是苯环或萘环。 m1 + m2的值介于1和2之间，m3 + m4的值介于1和2之间。n1和n2分别为0或1; COPYRIGHT KIPO 2011

著录项

相似文献

  • 专利
  • 外文文献
获取专利

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号