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MOS GATE POWER SEMICONDUCTOR DEVICE, CAPABLE OF INDUCING A PROTECTION OPERATION FOR A CIRCUIT AND A SEMICONDUCTOR SWITCHING DEVICE IN CASE OF AN ABNORMAL STATE OF A CIRCUIT
MOS GATE POWER SEMICONDUCTOR DEVICE, CAPABLE OF INDUCING A PROTECTION OPERATION FOR A CIRCUIT AND A SEMICONDUCTOR SWITCHING DEVICE IN CASE OF AN ABNORMAL STATE OF A CIRCUIT
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机译：MOS栅极功率半导体器件，在电路异常的情况下，能够引发电路和半导体开关器件的保护操作
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摘要
PURPOSE: A MOS gate power semiconductor device is provided to integrate a diode for inducing a protection operation in a semiconductor switching device, thereby slimming and simplifying a power electronic circuit.;CONSTITUTION: A main device area forms an active area and an edge termination area. A sub device area is horizontally formed on an external side of the main device area to include a diode. An anode electrode(540) and a cathode electrode(550) of the diode are exposed on the sub device area. The second conductive wells(322) are formed on the first conductive semiconductor substrate. The first conductive well(325) is formed in the second conductive well located in the sub device area.;COPYRIGHT KIPO 2011
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