首页> 外国专利> HETERO-JUNCTION DIODE, A METHOD OF MANUFACTURING THE SAME AND AN ELECTRONIC DEVICE COMPRISING HETERO-JUNCTION DIODE

HETERO-JUNCTION DIODE, A METHOD OF MANUFACTURING THE SAME AND AN ELECTRONIC DEVICE COMPRISING HETERO-JUNCTION DIODE

机译:异质结二极管,一种制造异质结二极管的方法和一种包括异质结二极管的电子设备

摘要

PURPOSE: A hetero-junction diode, a method of manufacturing the same and an electronic device comprising hetero-junction diode are provided to help a user to manufacture a diode under low temperature without high price precious metal by forming one of a bottom electrode and an top electrode with a non-precious material.;CONSTITUTION: A p-type non-oxidizing layer(20) is formed on a bottom electrode(10). A n-type oxide layer(30) is formed on the p-type non-oxidizing layer. A top electrode(40) is formed on the n-type oxide layer. One of the top electrode and the bottom electrode is manufactured by the non precious metal. The work function of the non-oxidizing layer is higher than that of the oxide layer by 0.8~1.2 eV.;COPYRIGHT KIPO 2011
机译:目的:提供一种异质结二极管,其制造方法以及包括异质结二极管的电子设备,以通过形成底部电极和底部电极中的一个来帮助用户在低温下制造二极管而无需高价贵金属。构成:在底部电极(10)上形成一个p型非氧化层(20)。在p型非氧化层上形成n型氧化物层(30)。在n型氧化物层上形成顶部电极(40)。顶部电极和底部电极之一由非贵金属制成。非氧化层的功函比氧化层的功函高0.8〜1.2 eV。; COPYRIGHT KIPO 2011

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